![]() ![]() Significant enhancement of conductivity and robust above room temperature ferromagnetism exhibit in InN/VTe2 van der Waals heterostructure under electrostatic doping and paves a new route toward a low-dimensional spintronic field-effect transistor. Meanwhile, the band alignment and magnetic anisotropy energy for InN/VTe2 van der Waals heterostructure can be also tuned effectively by strain. The InN/VTe2 van der Waals heterostructure possesses desired physical properties such as a symmetric band alignment, ferromagnetic ground state, large in-plane magnetic anisotropy energy of 1.54 meV, and high Curie temperature of 354 K. Here, we investigate the electronic structure and magnetic properties of InN/VTe2 van der Waals heterostructure under strain and electrostatic doping by first-principles calculations. The room temperature ferromagnetism can be induced for nonmagnetic pristine graphene-like InN monolayer through establishing van der Waals heterostructure with ferromagnetic semiconductor, which could be applied for realizing novel low-dimensional spintronic devices. Our work uncovers the layer-dependent interlayer antiferromagnetic reorientation engineered by magnetic field in the air-stable semiconductor, which could contribute to future vdW spintronic devices. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model. We reveal a pronounced odd-even layer effect of interlayer reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy and extra Zeeman energy of uncompensated magnetization. Here, we report the layer-dependent interlayer antiferromagnetic reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and first-principles calculations. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. One tantalizing magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order and thickness scaling. Magnetic van der Waals (vdW) materials offer a fantastic platform to investigate and exploit rich spin configurations stabilized in reduced dimensions. Our work reveals that two-dimensional Janus magnet Cr-based dichalcogenide halides have appealing multifunctionalities in the applications of topological electronic and valleytronic devices. Additionally, we show that large Dzyaloshinskii–Moriya interactions give rise to skyrmion states in CrTeX (X = Cl, Br, I) under external magnetic fields. Excitingly, by the benefit of the large magnetic moments on ligand S2− anions, the sought-after large-gap quantum anomalous Hall effect and sizable valley splitting can be achieved through the magnetic proximity effect in van der Waals heterostructures CrSBr/Bi2Se3/CrSBr and MoTe2/CrSBr, respectively. Here, by means of systematic first-principles studies on van der Waals Janus monolayer Cr-based dichalcogenide halides CrYX (Y = S, Se, Te X = Cl, Br, I), we find that CrSX (X = Cl, Br, I) are the very desirable high TC ferromagnetic semiconductors with an out-of-plane magnetization. Two-dimensional van der Waals Janus materials and their heterostructures offer fertile platforms for designing fascinating functionalities. Furthermore, the recent challenges, applications, and perspectives of 2D ferromagnetic magnetic materials are described in detail. ![]() Moreover, the thermal mobilization of electron’s spins which generates the spin voltage in ferromagnetic materials because of the Anomalous Nernst Effect (ANE) and Spin Seebeck Effect (SSE) is described. Herein, we have comprehensively discussed magnetic tunnel junction (MTJ), the heterostructure of 2D magnetic materials with TMDCs, the spin transport properties based on the Anomalous Hall Effect (AHE). ![]() This review article covers recent progress on van der Waals 2D ferromagnetic materials to investigate intrinsic magnetism, interlayer coupling effect on their magnetism, and device structures for spintronics. In this context, the findings of fundamental ferromagnetism in 2D van der Waals (vdW) crystals offer a mesmerizing field to understand and investigate the origin of magnetism which can invigorate spin transport. The class of two-dimensional (2D) materials is critical in the domain of scientific investigation and technology due to its low dimensionality which offers a unique platform to modify the electronic states to harvest diverse applications. ![]()
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